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Brand Name : onsemi
Model Number : NTD6416ANT4G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 100 V
Current - Continuous Drain (Id) @ 25°C : 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 81mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20 nC @ 10 V
|  			 Drain to Source Voltage (Vdss)  			 |  			 			 |  		|
|  			 Current - Continuous Drain (Id) @ 25°C  			 |  			 			 |  		|
|  			 Drive Voltage (Max Rds On, Min Rds On)  			 |  			 			 10V  			 |  			 			 |  		
|  			 Rds On (Max) @ Id, Vgs  			 |  			 			 81mOhm @ 17A, 10V  			 |  			 			 |  		
|  			 Vgs(th) (Max) @ Id  			 |  			 			 4V @ 250µA  			 |  			 			 |  		
|  			 Gate Charge (Qg) (Max) @ Vgs  			 |  			 			 20 nC @ 10 V  			 |  			 			 |  		
|  			 Vgs (Max)  			 |  			 			 ±20V  			 |  			 			 |  		
|  			 Input Capacitance (Ciss) (Max) @ Vds  			 |  			 			 620 pF @ 25 V  			 |  			 			 |  		
|  			 FET Feature  			 |  			 			 -  			 |  			 			 |  		
|  			 Power Dissipation (Max)  			 |  			 			 71W (Tc)  			 |  			 			 |  		
|  			 Operating Temperature  			 |  			 			 -55°C ~ 175°C (TJ)  			 |  			 			 |  		
|  			 Mounting Type  			 |  			 			 |  		|
|  			 Supplier Device Package  			 |  			 			 DPAK  			 |  			 			 |  		
|  			 Package / Case  			 |  			
Product Listing:
NTD6416ANT4G, ON Semiconductor MOSFET Power Electronics
Package: TO-252-3
Parameters:
• Drain-Source Voltage: -60 V
 • Drain Current: -16 A
 • RDS(on): 11 mΩ
 • Gate-Source Voltage: ±20 V
 • Operating Temperature: -55°C to +150°C
 • Pulsed Drain Current: -32 A
 • Mounting Type: Surface Mount

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                        NTD6416ANT4G TO-252-3 MOSFET Power Electronics Module with High Power Output and Low On-Resistance N-Channel 100 V Images |