HMC199MS8ETR RF Power Transistor For High Gain And Efficiency
HMC199MS8ETR RF Power Transistors
Product Description:
The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high power applications up to 2-500MHz, and provides outstanding performance and efficiency. It has a high power gain of 28.5dB and a maximum output power of 200W. The HMC199MS8ETR features a high-performance thermal design that enables excellent heat dissipation and enables operation at high power levels.
Features and Benefits:
-High power gain of 28.5dB
-Output power up to 200W
-High efficiency and outstanding performance
-High-performance thermal design
-Compact size and lightweight
-Wide frequency range of 2-500MHz
-High-temperature operation
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components .Our branches office include China, Hong Kong, Sigapore , Canada . Offer business, service, resourcing and information for our global member.
• Goods are ensured the highest quality possible and are delivered to our customers all over the world with speed and precision.
How to buy >>>
• Contact us by email & sent your inquire with your Transport destination .
• Online chat, the commissioner would be responded ASAP.
Service >>>
• Forwarder Shipment to world-wide, DHL ,TNT ,UPS,FEDEX etc. buyer don`t need to worry about shipping problem
• We will try to respond as quickly as possible. But due to time zone difference, please allow up to 24 hours to get your mail replied. The products were tested by some devices or software, we ensure that there is no quality problems.
• We are committed to providing fast, convenient and safe transportation service to global buyer.
Product Tags:
|
|
HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency Images
|
