SI4463-C2A-GMR RF Power Transistors
Product Description:
The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of producing up to 125W of peak power and up to 40W of average power with excellent linearity. They feature a high breakdown voltage of 200V, and a low gate-source capacitance of 0.7pF. The device also features low distortion and excellent efficiency.
Features:
• 125W peak power output
• 40W average power output
• High breakdown voltage of 200V
• Low gate-source capacitance of 0.7pF
• Low distortion
• Excellent efficiency
Applications:
• Wireless communication
• High power amplifiers
• High efficiency RF power amplifiers
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SI4463-C2A-GMR RF Power Transistor For High Efficiency And Reliability Images
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